Publications and Patents

Publications

Refereed Journals
1. "Effects of viscosity-dependent diffusion in the analysis of rotating disk electrode data", J.H. Han, A. M. Bowen, T.N. Andryushchenko, R.P. Chalupa, A.E. Miller, H.S. Simka, K.Cadien, S. Shankar, Journal of Applied Electrochemistry, 38, 1-5, (2008)
2. "Surface plasmon induced polarization rotation and optical vorticity in a single mode dielectric waveguide", P. S. Davids, B. A. Block, M. R. Reshotko, and K. Cadien, Optics Express, 15, 9476 (2007)
3. "Surface plasmon polarization filtering in a single mode dielectric waveguide", P. S. Davids, B. A. Block, and K. Cadien, Optics Express, 13, 7063 (2005)
4. "Effects of K3[Fe(CN)6] slurry's pH value and applied potential on tungsten removal rate for chemical-mechanical planarization application", S.B. Akonko, D.Y. Li, M. Ziomek-Moroz, J. Hawk, A. Miller, K. Cadien, Wear, 259, 1299(2005)
5. K. Cadien, M.R. Reshotko, B. A. Block, A.M. Bowen, D.L. Kencke, and P. Davids, "Challenges for on-chip optical interconnects", Proc. SPIE 5730, 133 (2005)
6. "On-chip optical interconnects", M.J.Kobrinsky, B.A.Block, J.-F.Zheng, B.C.Barnett, E.Mohammed, M.Reshotko, F.Robertson, S.List, I. Young, and K.Cadien, Intel Technology Journal, 8, No.2, (2004) pp129-143, http://www.intel.com/technology/itj/2004/volume08issue02/art05_on-chip/p01_abstract.htm
7. "An overview of the corrosion-wear interaction for planarizing metallic thin films", M. Ziomek-Moroz, A. Miller, J. Hawk, K. Cadien, D. Li, Wear of Materials, 255, 869(2003)
8. "Advances in characterization of CMP consumables", M.Moinpour, A.Tregub, A.Oehler, and K.Cadien, MRS Bulletin, 27, 766(2002)
9. "Chemically induced defects during copper polish", A.E.Miller, P.B.Fischer, A.D.Feller, and K.C.Cadien, Proceedings of the IEEE International, 2001. pp 143-145
10. "Current Issues and Future Trends in Chemical Mechanical Polishing", K.Cadien, S. Moroimoto, A. Philipossian, S. Sivaram, Y. Takamori, ULSI production technical urgent report No.4 : In the mass production line the actual condition and future plan of the CMP, Cord/code No 0224, published in January 1997, by Science Forum, Inc, Japan.
11. "Plasma etching of silicon in SF6", Y.-J. Lii, J.Jorne, K.C.Cadien, and J.E.Schoenholtz, J. Electrochem. Soc., 137, 3633(1990)
12. "Plasma etching of silicon in SF6 - Experimental and reactor modeling", Y.-J. Lii, J.Jorne, K.C.Cadien, and J.E.Schoenholtz, J. Electrochem. Soc., 135, C126(1988)
13. "Kinetics of rapid thermally nitrided titanium", S. Sivaram and K.C.Cadien, J. Electrochem. Soc., 134, C467(1987)
14. "Development of a test bed system for high melting temperature alloy fabrication and mass spectroscopy analysis of liquid metal ion sources", R.H.Higuchi-Rusli, J.C.Corelli, A.J.Steckl, and K.C.Cadien, J.Vac.Sci.Technol. A5, 2073(1987)
15. "Development of boron liquid metal ion sources for focused ion beam systems", R.H.Higuchi-Rusli, K.C.Cadien, J.C.Corelli, and A.J.Steckl, J.Vac.Sci.Technol. B5, 190(1987)
16. "Dry etching of TiSi2", K.Cadien, S.Sivaram, and C.Reitsema, J.Vac.Sci.Technol. A4, 739(1986)
17. "Reactive ion etching of SiC thin films using fluorinated gases", J.Sugiura, W.-J.Lu, K.C.Cadien, and A.J.Steckl, J.Vac.Sci.Technol. B4, 349(1986)
18. "An extension of the Engel-Brewer correlation to transition metal silicides", S.Sivaram, P.J.Ficalora, K.C.Cadien, J.Appl.Phys. 58, 1314(1985)
19. "Phase transitions in ion-mixed metastable (GaSb)1-x Gex semiconducting alloys", K.C.Cadien, B.Muddle, and J.E.Greene, J.Appl.Phys. 55, 4177(1984)
20. "A method for eliminating hillocks in integrated circuit metallizations", K.C.Cadien and D.L.Losee, J.Vac.Sci.Technol. B2, 82(1984)
21. "Raman scattering from metastable (GaSb)1-x Gex semiconducting films", T.N.Krabach, N.Wada, M.V.Klein, K.C.Cadien, and J.E.Greene, Solid State Commun. 45, 895(1983)
22. "Crystal growth and controlled doping of epitaxial Ge films on (100) GaAs by sputter deposition", K.C.Cadien and J.E.Greene, J. Crystal Growth 61, 15(1983)
23. "GaSb-Ge pseudobinary phase diagram", S.I.Shah, K.C.Cadien, and J.E.Greene, J.Electronic Materials 11, 52(1982)
24. "Ion mixing effects during film deposition: growth of metastable semiconducting and metallic alloys", K.C.Cadien, M.A.Ray, S.M.Shin, J.M.Rigsbee, S.A.Barnett, and J.E.Greene, J.Vac.Sci.Technol. 20, 370(1982)
25. "Growth of high quality epitaxial Ge films on (100) Si by sputter deposition", G.Bajor, K.C.Cadien, M.A.Ray, J.E.Greene, and P.S.Vijayakumar,Appl.Phys.Lett. 40, 696(1982)
26. "Growth of single-crystal GaAs and metastable (GaSb)1-x Gex alloys by sputter deposition: ion surface interaction effects:, J.E.Greene, S.A.Barnett, K.C.Cadien, and M.A.Ray, J.Crystal Growth 56, 389(1982)
27. "Single phase polycrystalline metastable (GaSb)1-x Gex alloys from annealing of amorphous mixtures: ion mixing effects during deposition", K.C.Cadien and J.E.Greene, Appl.Phys.Lett. 40, 329(1982)
28. "Growth and thermal stability of single-crystal metastable (GaSb)1-x Gex films", K.C.Cadien, A.H.Elthoukhy, and J.E.Greene, Vacuum 31, 253(1981)
29. "Epitaxial Ge/GaAs heterostructure by scanned CW laser annealing of a-Ge layers on GaAs", J.E.Greene, K.C.Cadien, D.Lubben, G.A.Hawkins, G.R.Erikson, and J.R.Clarke, Appl.Phys.Lett 39, 232(1981)
30. "Growth of single-crystal metastable (GaSb)1-x Gex films", K.C.Cadien, A.H.Elthoukhy, and J.E.Greene, Appl.Phys.Lett 38, 773(1981)
31. "Growth of single-crystal metatstable InSb1-xBix and (GaSb)1-x Gex semiconducting films", K.C.Cadien, J.L.Zilko, A.H.Eltoukhy, and J.E. Greene, J.Vac.Sci.Technol. 17, 441(1980)
32. "A servo-controlled hot-torsion machine for hot-working studies", S.Fulop, K.C.Cadien, M.J.Luton, and H.J.McQueen, J. Testing and Evaluation, 5, 419 (1977)
33. "Thermally activated flow of polycrystalline copper at elevated temperatures", M.J.Luton and K.C.Cadien, J. Metals, 28, A64(1976)

Book Chapters
1. "Chemical-Mechanical Planarization", A.E.Miller, T. Andryuschencko, P. Fischer, A.D. Feller, K.C. Cadien, ASM Handbook on Corrosion: Fundamentals, Testing, and Protection, Volume 13A, pp 164-169, 2003
2. "Chemical Mechanical Polishing", K.C. Cadien, Handbook of Thin Film Deposition Processes and Techniques, 2nd Ed., Noyes Publication, 2002
3. "Introduction to Electronic Materials" K.C. Cadien and S. Sivaram, Chapter 2 of "Handbook of Thin Film Technology", Institute of Physics Publishing Ltd, 1995

PATENTS GRANTED
P.B. Fischer, A.E. Miller, K.C. Cadien, C.E. Barns, "Introducing nanotubes in trenches and structures formed thereby", US Patent 7,666,465, Granted February 23, 2010
T.N. Andreyushchenko, K.Cadien, P. Fischer, and V.M. Dubin, "Method to fabricate interconnect structures", US Patent 7,476,974, granted January 13, 2009
C-M. Park, S. Ramanathan, P. Morrow, and K.Cadien,"Portable NMR device and method for making and using the same ", US Patent 7,345,479, granted March 18, 2008
C-M. Park, S. Ramanathan, and K.Cadien, "Device and method using magnetic pattern on disk ", US Patent 7,319,323, granted January 15, 2008
C-M. Park, S. Ramanathan, P. Morrow, and K.Cadien, " Integrated on-chip NMR and ESR device and a method for making and using same", US Patent 7,274,191, granted September 25, 2007
A. Feller and K. Cadien , "Method of improving chemical mechanical polish endpoint signals by use of chemical additives", US Patent 7,182,882, granted February 27, 2007
T. N. Andreyushchenko, K. Cadien, P. B. Fischer, and V. M. Dubin, "Method to fabricate interconnect structures", US Patent 7,087,517, granted August 8, 2006
K. Cadien and A. Feller, "Abrasives for chemical mechanical polishing ", US Patent 7,087,188, granted August 8, 2006
A. E. Miller, A. Feller, and K. Cadien, "High pH slurry for chemical mechanical polishing of copper", US Patent 6,909,193, granted June 21, 2005
K. Cadien and A. Feller, "Abrasives for chemical mechanical polishing ", US Patent 6,881,674, granted April 19, 2005
P. B. Fischer, A.E. Miller, K. Cadien, and C. E. Barns, "Introducing nanotubes in trenches and structures formed thereby", US Patent application number 20060141222, filed December 29, 2004
H. S. Simka, S. Shankar, L. Jiang, P. B. Fischer, A. E. Miller, and K. Cadien, "Copper containing abrasive particles for copper CMP slurries", US Patent application number 20060138087, filed December 29, 2004
H-M. Park and K. Cadien, "Interconnects having a recessed capping layer and methods of fabricating", US Patent application number 20060128144, filed December 15, 2004
A. E. Miller, A. Feller, and K. Cadien, "High pH slurry for chemical mechanical polishing of copper", US Patent 6,825,117, granted November 30, 2004
J. Clark, K. Cadien, and J. K. Brask, "Processing electronic devices using a combination of supercritical fluids and sonic energy", US Patent application number 20060065627, filed September 29, 2004
A. E. Miller, A. Feller, and K. Cadien, "Ceric-ion slurry for use in chemical-mechanical polishing", US Patent 6,752,844, granted June 22, 2004
A. E. Miller, A. Feller, and K. Cadien, "Slurry and method for chemical mechanical polishing of copper", US Patent 6,740,591, granted May 25, 2004
G. Marcyk and K. Cadien,"Low temperature chemical mechanical polishing of dielectric materials", US Patent 6,726,529, granted April 27, 2004
A. E. Miller, A. Feller, and K. Cadien, "Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing ", US Patent 6,719,614, granted April 13, 2004
K.Cadien, "Methods for the plasma formation of a microelectronic barrier layer", US Patent application number 20060141780, filed December 23, 2004
A. E. Miller, A. Feller, and K. Cadien, "Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing ", US Patent 6,464,568, granted October 15, 2002
A. E. Miller, A. Feller, and K. Cadien, "Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing ", US Patent 6,443,814, granted September 3, 2002
K.Cadien and A. Feller, "Slurries for chemical mechanical polishing", US Patent 6,375,552 granted April 23, 2002
K. Cadien, A. Feller, M. Buehler, and P. B. Fischer, "Ceria based slurry for chemical-mechanical polishing", US Patent 6,358,853 granted March 19, 2002
K.Cadien and A. Feller, "Slurries for chemical mechanical polishing", US Patent 6,178,585 granted January 30, 2001
G. Marcyk and K. Cadien, "Low temperature chemical mechanical polishing of dielectric materials", US Patent 6,121,144 granted September 19, 2000
M.Maxim, M.Kocsis, N.Hseih, M.Prince, K.Cadien, "Sacrificial erosion control features for chemical mechanical polishing process", US Patent 6,087,733 granted July 11, 2000
K.Cadien and A.Feller,"Plug or via formation using novel slurries for chemical mechanical polishing", US Patent 6,046,099 granted April 4, 2000
K.Cadien and A.Feller, "Slurries for chemical mechanical polishing tungsten films", US Patent 5,954,975 granted September 21, 1999
K.Cadien and A.Feller,"Slurries for chemical mechanical polishing", US Patent 5,836,806 granted November 17, 1998
R.Chau, D.Fraser, K.Cadien, G.Raghavan, and L.Yau, "Method of fabricating a MOS transistor having a composite gate electrode", US Patent 5,783,478 granted July 21, 1998
A.Feller and K.Cadien, "Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide", US Patent 5,700,383 granted December 23, 1997
R.Chau, D.Fraser, K.Cadien, G.Raghavan, and L.Yau, "MOS transistor having a composite gate electrode and method of fabrication", US Patent 5,625,217 granted April 29, 1997
K.Cadien and L.Yau, "Method and apparatus for conditioning of chemical-mechanical polishing pads", US Patent 5,611,943 granted March 18, 1997
K.Cadien and S.Sivaram, "Integrated tungsten/tungsten silicide plug process", US Patent 5,604,158 granted February 18, 1997
K.Cadien and A.Feller, "Slurries for chemical mechanical polishing", 5,516,346 granted May 14, 1996
D.Danielson, A.Feller, K.Cadien, "Chemical mechanical polishing slurry delivery and mixing system", US Patent 5,407,526 granted April 18, 1995
K.Cadien and A.Feller, "Slurries for chemical mechanical polishing", 5,340,370 granted August 23, 1994
L.Vacha, P.Schultz, C.Moynihan, S.Raychaudhuri, K.Cadien, B.Harbison, and R.Mossadegh, "Hermetic coatings for non-silica based optical fibers", 4,874,222 granted October 17, 1989