3D Simulations of Polycrystalline Thin Film Growth Morphology, Texture and Self-Similarity
Colin Ophus, PhD student in Materials Engineering
We have simulated polycrystalline thin film growth in three dimensions using the van der Drift competitive growth model. Both cubic and hexagonal crystals were simulated, representing a wide variety of metals and semiconductors that can be grown by vapour deposition. The bulk and surface morphology of each simulation is analyzed from a self-scaling perspective and the growth coefficients computed. The theoretical scaling coefficient of 0.4 for films in three dimensions is confirmed for all morphologies. Texture data is also computed and displayed as stereographic projections. Various parameters such as surface roughness and mean grain size are shown for a large variety of crystal geometries. Key growth zones are mapped out explicitly. This information is highly useful for optimizing deposition techniques such as sputtering, evaporation or chemical vapour deposition.
We have simulated polycrystalline thin film growth in three dimensions using the van der Drift competitive growth model. Both cubic and hexagonal crystals were simulated, representing a wide variety of metals and semiconductors that can be grown by vapour deposition. The bulk and surface morphology of each simulation is analyzed from a self-scaling perspective and the growth coefficients computed. The theoretical scaling coefficient of 0.4 for films in three dimensions is confirmed for all morphologies. Texture data is also computed and displayed as stereographic projections. Various parameters such as surface roughness and mean grain size are shown for a large variety of crystal geometries. Key growth zones are mapped out explicitly. This information is highly useful for optimizing deposition techniques such as sputtering, evaporation or chemical vapour deposition.
